Invention Grant
- Patent Title: Half-bridge circuit protected against short circuits and having semiconductor switches
- Patent Title (中): 半桥电路防止短路并具有半导体开关
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Application No.: US13127711Application Date: 2008-11-05
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Publication No.: US08593773B2Publication Date: 2013-11-26
- Inventor: Markus Heckmann
- Applicant: Markus Heckmann
- Applicant Address: DE Munich
- Assignee: OSRAM Gesellschaft mit berschraenkter Haftung
- Current Assignee: OSRAM Gesellschaft mit berschraenkter Haftung
- Current Assignee Address: DE Munich
- International Application: PCT/EP2008/064972 WO 20081105
- International Announcement: WO2010/051836 WO 20100514
- Main IPC: H02H3/08
- IPC: H02H3/08
Abstract:
A circuit arrangement with two semiconductor switches connected in series between a first potential connection and a second potential connection is provided. The circuit arrangement may include an inductive element connected in series between the two potential connections and by elements of an action chain of such a nature that, under predefined conditions, a voltage drop across the inductive element effects the switching off of at least one of the semiconductor switches.
Public/Granted literature
- US20110279941A1 HALF-BRIDGE CIRCUIT PROTECTED AGAINST SHORT CIRCUITS AND HAVING SEMICONDUCTOR SWITCHES Public/Granted day:2011-11-17
Information query
