Invention Grant
US08593852B2 Test device and test method for resistive random access memory and resistive random access memory device
有权
电阻随机存取存储器和电阻随机存取存储器件的测试装置和测试方法
- Patent Title: Test device and test method for resistive random access memory and resistive random access memory device
- Patent Title (中): 电阻随机存取存储器和电阻随机存取存储器件的测试装置和测试方法
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Application No.: US13238479Application Date: 2011-09-21
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Publication No.: US08593852B2Publication Date: 2013-11-26
- Inventor: Kazuaki Kawaguchi , Kazushige Kanda
- Applicant: Kazuaki Kawaguchi , Kazushige Kanda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-172361 20090723; JP2011-011059 20110121
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to the embodiments, a first write enable signal that changes with a constant period and a second write enable signal that changes at a time portion in which a limit time between activation/deactivation control of word lines and activation/deactivation control of bit lines is checked are input, a plurality of core control signals in which a time interval with which the core control signals change is locally shorter than a period of the first write enable signal based on the first write enable signal and the second write enable signal that are input is generated, and an operation verification of the resistive random access memory is performed by using the generated core control signals, whereby a cycle time in an arbitrary test cycle is locally and arbitrary adjusted.
Public/Granted literature
- US20120079330A1 TEST DEVICE AND TEST METHOD FOR RESISTIVE RANDOM ACCESS MEMORY AND RESISTIVE RANDOM ACCESS MEMORY DEVICE Public/Granted day:2012-03-29
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