Invention Grant
- Patent Title: Magnetic resistance memory apparatus having multi levels and method of driving the same
- Patent Title (中): 具有多级的磁阻存储装置及其驱动方法
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Application No.: US13244183Application Date: 2011-09-23
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Publication No.: US08593863B2Publication Date: 2013-11-26
- Inventor: Won Joon Choi
- Applicant: Won Joon Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0078268 20110805
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magnetic resistance memory apparatus capable of implementing various levels and a method of driving the same are provided. The magnetic resistance memory apparatus includes a first magnetic device that includes a fixed layer having a fixed magnetization direction, a tunnel layer disposed on the fixed layer, and a first free layer disposed on the tunnel layer having a variable magnetization direction, and a second magnetic device disposed on the first magnetic device including a plurality of free layers insulated with a spacer layer interposed.
Public/Granted literature
- US20130033927A1 MAGENTIC RESISTANCE MEMORY APPARATUS HAVING MULTI LEVELS AND METHOD OF DRIVING THE SAME Public/Granted day:2013-02-07
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