Invention Grant
US08593881B2 Pre-charge sensing scheme for non-volatile memory (NVM) 有权
用于非易失性存储器(NVM)的预充电感测方案

Pre-charge sensing scheme for non-volatile memory (NVM)
Abstract:
The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.
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