Invention Grant
- Patent Title: Pre-charge sensing scheme for non-volatile memory (NVM)
- Patent Title (中): 用于非易失性存储器(NVM)的预充电感测方案
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Application No.: US13301826Application Date: 2011-11-22
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Publication No.: US08593881B2Publication Date: 2013-11-26
- Inventor: Yaal Horesh , Oleg Dadashev , Yoram Betser , Avri Harush
- Applicant: Yaal Horesh , Oleg Dadashev , Yoram Betser , Avri Harush
- Applicant Address: IL Netanya
- Assignee: Spansion Israel Ltd
- Current Assignee: Spansion Israel Ltd
- Current Assignee Address: IL Netanya
- Agency: Eitan, Mehulal & Sadot
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.
Public/Granted literature
- US20120063238A1 PRE-CHARGE SENSING SCHEME FOR NON-VOLATILE MEMORY (NVM) Public/Granted day:2012-03-15
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