A memory integrated circuit comprises first and second memory arrays and first and second interfaces. The first interface receives a signal for accessing a memory location in one of the first and the second memory arrays during a first time interval. The second interface receives a signal for accessing a memory location in one of the first and the second memory arrays during the first time interval. The first interface receives signals for accessing memory locations in the first and the second memory arrays, and the second interface is disabled from accessing the first and the second memory arrays during the second time interval. A signaling rate of a signal received by the second interface, a supply voltage of the second interface, an on-chip termination impedance of the second interface, or a voltage amplitude of a signal received by the second interface is adjusted during the second time interval.