Invention Grant
US08594146B2 Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
表面发射激光元件,表面发射激光器阵列,光学扫描装置和成像装置

  • Patent Title: Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
  • Patent Title (中): 表面发射激光元件,表面发射激光器阵列,光学扫描装置和成像装置
  • Application No.: US12865951
    Application Date: 2009-02-09
  • Publication No.: US08594146B2
    Publication Date: 2013-11-26
  • Inventor: Naoto JikutaniSatoru SugawaraShunichi Sato
  • Applicant: Naoto JikutaniSatoru SugawaraShunichi Sato
  • Applicant Address: JP Tokyo
  • Assignee: Ricoh Company, Ltd.
  • Current Assignee: Ricoh Company, Ltd.
  • Current Assignee Address: JP Tokyo
  • Agency: Cooper & Dunham LLP
  • Priority: JP2008-029877 20080212; JP2008-112494 20080423; JP2008-138419 20080527; JP2008-287101 20081107; JP2008-287123 20081107
  • International Application: PCT/JP2009/052457 WO 20090209
  • International Announcement: WO2009/102048 WO 20090820
  • Main IPC: H01S5/00
  • IPC: H01S5/00
Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
Abstract:
A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.
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