Invention Grant
US08594610B2 Stacked CMOS power amplifier and RF coupler devices and related methods
有权
叠层CMOS功率放大器和射频耦合器件及相关方法
- Patent Title: Stacked CMOS power amplifier and RF coupler devices and related methods
- Patent Title (中): 叠层CMOS功率放大器和射频耦合器件及相关方法
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Application No.: US13656033Application Date: 2012-10-19
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Publication No.: US08594610B2Publication Date: 2013-11-26
- Inventor: Abhay Misra
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H04B1/28
- IPC: H04B1/28 ; H04B1/16

Abstract:
Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.
Public/Granted literature
- US20130045699A1 Stacked CMOS Power Amplifier and RF Coupler Devices and Related Methods Public/Granted day:2013-02-21
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