Invention Grant
US08595523B2 Data writing method for non-volatile memory, and controller and storage system using the same 有权
非易失性存储器的数据写入方法,以及使用相同的控制器和存储系统

  • Patent Title: Data writing method for non-volatile memory, and controller and storage system using the same
  • Patent Title (中): 非易失性存储器的数据写入方法,以及使用相同的控制器和存储系统
  • Application No.: US13034686
    Application Date: 2011-02-24
  • Publication No.: US08595523B2
    Publication Date: 2013-11-26
  • Inventor: Hong-Lipp Ko
  • Applicant: Hong-Lipp Ko
  • Applicant Address: TW Miaoli
  • Assignee: Phison Electronics Corp.
  • Current Assignee: Phison Electronics Corp.
  • Current Assignee Address: TW Miaoli
  • Agency: Jianq Chyun IP Office
  • Priority: TW99104816A 20100212; TW99141041A 20101126
  • Main IPC: G06F1/32
  • IPC: G06F1/32
Data writing method for non-volatile memory, and controller and storage system using the same
Abstract:
A data writing method for writing data from a host system into a plurality of memory dies of a rewritable non-volatile memory storage apparatus is provided. The data writing method includes determining whether the data transmission interface of the host system complies with a first interface standard or a second interface standard. The data writing method also includes using a general mode to write the data into the memory dies when the data transmission interface of the host system complies with the first interface standard and using a power saving mode to write the data into the memory dies when the data transmission interface of the host system complies with the second interface standard. Accordingly, the data writing method can effectively prevent the stability of the rewritable non-volatile memory storage apparatus from reducing due to insufficient power supplied by the data transmission interface.
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