Invention Grant
US08596123B2 MEMS device with impacting structure for enhanced resistance to stiction
有权
具有冲击结构的MEMS器件,用于增强抗静电性能
- Patent Title: MEMS device with impacting structure for enhanced resistance to stiction
- Patent Title (中): 具有冲击结构的MEMS器件,用于增强抗静电性能
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Application No.: US13101793Application Date: 2011-05-05
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Publication No.: US08596123B2Publication Date: 2013-12-03
- Inventor: Peter S. Schultz
- Applicant: Peter S. Schultz
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Schmeiser, Olsen & Watts LLP
- Agent Lowell W. Gresham; Charlene R. Jacobsen
- Main IPC: G01P15/125
- IPC: G01P15/125

Abstract:
A microelectromechanical systems (MEMS) device (20) includes a substrate (24) and a movable element (22) adapted for motion relative to the substrate (24). A secondary structure (58) extends from the movable element (22). The secondary structure (58) includes a secondary mass (70) and a spring (68) interconnected between the movable element (22) and the mass (70). The spring (68) is sufficiently stiff to prevent movement of the mass (70) when the movable element (22) is subjected to force within a sensing range of the device (20). However, the spring (68) deflects when the device (20) is subjected to mechanical shock (86), and the spring (68) rebounds thus causing the mass (70) to impact the movable element (22) in a direction that would be likely to dislodge a potentially stuck movable element (22).
Public/Granted literature
- US20120280591A1 MEMS DEVICE WITH IMPACTING STRUCTURE FOR ENHANCED RESISTANCE TO STICTION Public/Granted day:2012-11-08
Information query
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