Invention Grant
US08597376B2 Method of producing porous valve metal thin film and thin film produced thereby
有权
制造多孔阀金属薄膜的方法和由此制备的薄膜
- Patent Title: Method of producing porous valve metal thin film and thin film produced thereby
- Patent Title (中): 制造多孔阀金属薄膜的方法和由此制备的薄膜
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Application No.: US13626001Application Date: 2012-09-25
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Publication No.: US08597376B2Publication Date: 2013-12-03
- Inventor: Toshiyuki Osako , Tetsufumi Komukai
- Applicant: Sumitomo Metal Mining Co., Ltd.
- Applicant Address: JP
- Assignee: Sumitomo Metal Mining Co., Ltd
- Current Assignee: Sumitomo Metal Mining Co., Ltd
- Current Assignee Address: JP
- Agency: Hartman Global IP Law
- Agent Gary M. Hartman; Domenica N. S. Hartman
- Main IPC: H01G9/00
- IPC: H01G9/00

Abstract:
Provided are a porous valve metal thin film having a great surface area, a method for the production thereof, and a thin film capacitor having a great capacity density utilizing the thin film as an anode. The porous valve metal thin film is produced by preparing a thin film in which a valve metal and a hetero-phase component have a particle diameter within a range of from 1 nm to 1 μm and the valve metal and the hetero-phase component are uniformly distributed, subjecting the thin film to a heat treatment so as to adjust the particle diameter and to appropriately sinter the film, and removing the hetero-phase portion.
Public/Granted literature
- US20130017115A1 METHOD OF PRODUCING POROUS VALVE METAL THIN FILM AND THIN FILM PRODUCED THEREBY Public/Granted day:2013-01-17
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