Invention Grant
- Patent Title: Method for producing semiconductor optical device
- Patent Title (中): 半导体光学元件的制造方法
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Application No.: US13739169Application Date: 2013-01-11
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Publication No.: US08597966B2Publication Date: 2013-12-03
- Inventor: Kenji Hiratsuka
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries Ltd.
- Current Assignee: Sumitomo Electric Industries Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2012-008298 20120118
- Main IPC: H01L21/308
- IPC: H01L21/308

Abstract:
A method for producing a semiconductor optical device includes a first etching step of etching a stacked semiconductor layer with a first mask to form a stripe-shaped optical waveguide, the stripe-shaped optical waveguide including first and second stripe-shaped optical waveguides formed on first and second regions of a substrate, respectively; a step of forming a second mask on the stacked semiconductor layer with the first mask left; and a second etching step of etching the stacked semiconductor layer on the first region with the first and second masks. The second mask has a pattern for forming a mesa structure and includes an opening including first and second opening edges remote from side surfaces of the first stripe-shaped optical waveguide. The mesa structure is formed of the first stripe-shaped optical waveguide in the second etching step. The second stripe-shaped optical waveguide formed in the first etching step has a ridge structure.
Public/Granted literature
- US20130183780A1 METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE Public/Granted day:2013-07-18
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