A method is provided for fabricating a microelectronic device with programmable memory that includes: i) depositing an intermediate layer of a material having a chalcogenide on a first electrode; ii) irradiating the intermediate layer of step i with ultraviolet radiation; iii) depositing an ionizable metallic layer on the intermediate layer obtained in step ii; iv) diffusing the metal ions originating from the ionizable metallic layer of step iii into the intermediate layer to form a chalcogenide material containing metal ions; and v) depositing a second electrode on the layer of chalcogenide material containing metal ions obtained in step iv to form the microelectronic device.