Invention Grant
US08598024B2 Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method
有权
金属硅化物层的制造方法，使用其的半导体器件的制造方法以及使用该方法制造的半导体器件
- Patent Title: Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method
- Patent Title (中): 金属硅化物层的制造方法，使用其的半导体器件的制造方法以及使用该方法制造的半导体器件
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Application No.: US13239521Application Date: 2011-09-22
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Publication No.: US08598024B2Publication Date: 2013-12-03
- Inventor: Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
- Applicant: Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0095928 20101001
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
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