Invention Grant
- Patent Title: Barrier layer removal method and apparatus
- Patent Title (中): 阻隔层去除方法和装置
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Application No.: US13059814Application Date: 2008-08-20
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Publication No.: US08598039B2Publication Date: 2013-12-03
- Inventor: Jian Wang , Zhaowei Jia , Junping Wu , Liangzhi Xie , Hui Wang
- Applicant: Jian Wang , Zhaowei Jia , Junping Wu , Liangzhi Xie , Hui Wang
- Applicant Address: CN
- Assignee: ACM Research (Shanghai) Inc.
- Current Assignee: ACM Research (Shanghai) Inc.
- Current Assignee Address: CN
- Agent Howard C. Miskin; Gloria Tsui-Yip
- International Application: PCT/CN2008/072059 WO 20080820
- International Announcement: WO2010/020092 WO 20100225
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
Public/Granted literature
- US20110177692A1 Barrier Layer Removal Method and Apparatus Public/Granted day:2011-07-21
Information query
IPC分类:
