Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12819992Application Date: 2010-06-21
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Publication No.: US08598045B2Publication Date: 2013-12-03
- Inventor: Hideaki Kikuchi , Kouichi Nagai , Tomoyuki Kikuchi
- Applicant: Hideaki Kikuchi , Kouichi Nagai , Tomoyuki Kikuchi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2007-044534 20070223
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.
Public/Granted literature
- US20100255675A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-10-07
Information query
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