Invention Grant
- Patent Title: Handling beam glitches during ion implantation of workpieces
- Patent Title (中): 在离子植入工件期间处理光束毛刺
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Application No.: US13170815Application Date: 2011-06-28
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Publication No.: US08598547B2Publication Date: 2013-12-03
- Inventor: Russell J. Low , Atul Gupta , William T. Weaver
- Applicant: Russell J. Low , Atul Gupta , William T. Weaver
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: A61N5/00
- IPC: A61N5/00 ; G21G5/00
Abstract:
Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.
Public/Granted literature
- US20110315899A1 HANDLING BEAM GLITCHES DURING ION IMPLANTATION OF WORKPIECES Public/Granted day:2011-12-29
Information query
