Invention Grant
- Patent Title: Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods
- Patent Title (中): 具有背面端子和相关系统和方法的垂直固态换能器和固态换能器阵列
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Application No.: US13346495Application Date: 2012-01-09
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Publication No.: US08598611B2Publication Date: 2013-12-03
- Inventor: Vladimir Odnoblyudov , Martin F. Schubert , Scott D. Schellhammer , Jeremy S. Frei
- Applicant: Vladimir Odnoblyudov , Martin F. Schubert , Scott D. Schellhammer , Jeremy S. Frei
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts.
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Information query
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