Invention Grant
- Patent Title: ESD protection device with tunable design windows
- Patent Title (中): 具有可调设计窗口的ESD保护装置
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Application No.: US13091468Application Date: 2011-04-21
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Publication No.: US08598625B2Publication Date: 2013-12-03
- Inventor: Hsi-Yu Kuo , Jam-Wem Lee , Yi-Feng Chang
- Applicant: Hsi-Yu Kuo , Jam-Wem Lee , Yi-Feng Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/73
- IPC: H01L29/73

Abstract:
An electrostatic discharge (ESD) device includes a high-voltage well (HVW) region of a first conductivity type; a first heavily doped region of a second conductivity type opposite the first conductivity type over the HVW region; and a doped region of the first conductivity type contacting the first heavily doped region and the HVW region. The doped region is under the first heavily doped region and over the HVW region. The doped region has a first impurity concentration higher than a second impurity concentration of the HVW region and lower than a third impurity concentration of the first heavily doped region. The ESD device further includes a second heavily doped region of the second conductivity type over the HVW region; and a third heavily doped region of the first conductivity type over and contacting the HVW region.
Public/Granted literature
- US20120168906A1 ESD Protection Device with Tunable Design Windows Public/Granted day:2012-07-05
Information query
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