Invention Grant
US08598665B2 Controlling threshold voltage in carbon based field effect transistors
失效
控制基于碳的场效应晶体管的阈值电压
- Patent Title: Controlling threshold voltage in carbon based field effect transistors
- Patent Title (中): 控制基于碳的场效应晶体管的阈值电压
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Application No.: US13607589Application Date: 2012-09-07
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Publication No.: US08598665B2Publication Date: 2013-12-03
- Inventor: Martin M. Frank , Dechao Guo , Shu-Jen Hen , Kuen-Ting Shiu
- Applicant: Martin M. Frank , Dechao Guo , Shu-Jen Hen , Kuen-Ting Shiu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
A field effect transistor fabrication method includes defining a gate structure on a substrate, depositing a dielectric layer on the gate structure, depositing a first metal layer on the dielectric layer, removing a portion of the first metal layer, depositing a second metal layer, annealing the first and second metal layers, and defining a carbon based device on the dielectric layer and the gate structure.
Public/Granted literature
- US20130175633A1 CONTROLLING THRESHOLD VOLTAGE IN CARBON BASED FIELD EFFECT TRANSISTORS Public/Granted day:2013-07-11
Information query
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