Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13398910Application Date: 2012-02-17
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Publication No.: US08598692B2Publication Date: 2013-12-03
- Inventor: Tomohiko Iwane
- Applicant: Tomohiko Iwane
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2011-037573 20110223
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device includes (i) a tape base material, (ii) a wiring pattern, (iii) a semiconductor element which is electrically connected with the wiring pattern, (iv) a top-side insulating protective film which covers a top surface of the tape base material and has an top-side opening section provided in a region where the top-side insulating protective film faces the semiconductor element, and (v) a reverse-side insulating protective film which covers a reverse surface of the tape base material and has a reverse-side opening section provided on a reverse side below the top-side opening section. The top-side insulating protective film has a protruding opening section extending outwardly from the region. An opening of the reverse-side opening section is 1.00 time to 8.50 times larger in an area than the region.
Public/Granted literature
- US20120211877A1 Semiconductor Device And Method For Manufacturing Same Public/Granted day:2012-08-23
Information query
IPC分类: