In one embodiment, there is provided a semiconductor device that includes: a substrate; a dielectric layer on the substrate; a first ground metal layer embedded in the dielectric layer and having a first DC potential, the first ground metal layer having a first hole therethrough; a first ground patch disposed in the first hole; a second ground metal layer embedded in the dielectric layer such that the dielectric layer is interposed between the first and second ground metal layers in a thickness direction of the dielectric layer, the second ground metal layer having a second DC potential and having a second hole therethrough; a second ground patch disposed in the second hole; a first via which electrically connects the first ground metal layer and the second ground patch; and a second via which electrically connects the second ground metal layer and the first ground patch.