Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US12004920Application Date: 2007-12-21
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Publication No.: US08598717B2Publication Date: 2013-12-03
- Inventor: Naomi Masuda
- Applicant: Naomi Masuda
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2006-353412 20061227; JP2006/355025 20061228
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/522
Abstract:
A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.
Public/Granted literature
- US20090026609A1 Semiconductor device and method for manufacturing the same Public/Granted day:2009-01-29
Information query
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