Invention Grant
- Patent Title: Diode and memory device having a diode
- Patent Title (中): 具有二极管的二极管和存储器件
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Application No.: US13324242Application Date: 2011-12-13
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Publication No.: US08599607B2Publication Date: 2013-12-03
- Inventor: Wendong Song , Luping Shi , Yun Fook Thomas Liew , Tow Chong Chong
- Applicant: Wendong Song , Luping Shi , Yun Fook Thomas Liew , Tow Chong Chong
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Priority: SG201009242-7 20101213
- Main IPC: G11C17/06
- IPC: G11C17/06
Abstract:
A diode and a memory device having a diode are provided. The diode includes a semiconductor layer and phase change material layer. The semiconductor layer and the phase change material layer have different energy bandgaps and different carrier concentrations such that an isotype heterojunction is formed at a boundary interface between the semiconductor layer and the phase change material layer.
Public/Granted literature
- US20120147668A1 Diode and Memory Device Having a Diode Public/Granted day:2012-06-14
Information query
