Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US12402994Application Date: 2009-03-12
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Publication No.: US08601219B2Publication Date: 2013-12-03
- Inventor: Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
- Applicant: Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-063403 20080312
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28

Abstract:
A memory system includes a first storing area included in a volatile semiconductor memory, a second and a third storing area included in a nonvolatile semiconductor memory, a controller that allocates the storage area of the nonvolatile semiconductor memory to the second storing area and the third storing area in a logical block unit associated with one or more blocks. The second storing area is configured to be managed with a first management unit. The third storing area is configured to be managed with a second management unit, a size of the second management unit being larger than a size of the first management unit. When flushing of data from the first storing area to the second storing area or the third storing area is determined, the controller collects, from at least one of the first storing area, the second storing area and the third storing area, data other than the data determined to be flushed and controls the flushing of the data such that a total of the data is a natural number times as large as the block unit as much as possible.
Public/Granted literature
- US20090235016A1 MEMORY SYSTEM Public/Granted day:2009-09-17
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