A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.