Invention Grant
US08605248B2 Exposure method and lithography system 有权
曝光方法和光刻系统

  • Patent Title: Exposure method and lithography system
  • Patent Title (中): 曝光方法和光刻系统
  • Application No.: US11915504
    Application Date: 2006-05-24
  • Publication No.: US08605248B2
    Publication Date: 2013-12-10
  • Inventor: Masaharu Kawakubo
  • Applicant: Masaharu Kawakubo
  • Applicant Address: JP Tokyo
  • Assignee: Nikon Corporation
  • Current Assignee: Nikon Corporation
  • Current Assignee Address: JP Tokyo
  • Priority: JP2005-152974 20050525
  • International Application: PCT/JP2006/310314 WO 20060524
  • International Announcement: WO2006/126569 WO 20061130
  • Main IPC: G03B27/68
  • IPC: G03B27/68
Exposure method and lithography system
Abstract:
In the case where the previous process (X) and the previous process (Y) are different in step 310, only a distortion amount in an X-axis direction is extracted from image distortion data of the previous process (X) in Step 316 and only a distortion amount in a Y-axis direction is extracted from image distortion data of the previous process (Y) in Step 318, and then in Step 320, image distortion data is created by synthesizing the extracted distortion amounts, and the synthesized image distortion data is used for subsequent adjustment of projected images. With this operation, the distortion of projected images can be adjusted per axis and accordingly overlay exposure with high accuracy can be realized.
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