Invention Grant
- Patent Title: Thin-film capacitor and manufacturing method thereof
- Patent Title (中): 薄膜电容器及其制造方法
-
Application No.: US12876648Application Date: 2010-09-07
-
Publication No.: US08605410B2Publication Date: 2013-12-10
- Inventor: Yasunobu Oikawa , Yoshihiko Yano
- Applicant: Yasunobu Oikawa , Yoshihiko Yano
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2009-224801 20090929
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/30 ; H01G4/228 ; H01G4/20 ; H01G4/06 ; H01G9/00

Abstract:
To provide a thin-film capacitor capable of improving the stability of electric connection between an internal electrode layer and a connection electrode. The thin-film capacitor comprises: two or more dielectric layers deposited above a base electrode; an internal electrode layer being deposited between the dielectric layers and having a projecting portion which projects from the dielectric layer when seen from a laminating direction; and a connection electrode electrically connected to the internal electrode layer via at least a part of a surface and an end face of the internal electrode layer included in the projecting portion, wherein a ratio L/t between a projection amount L of the projecting portion of the internal electrode layer with respect to the dielectric layer and a thickness t of the internal electrode layer is 0.5 to 120.
Public/Granted literature
- US20110075317A1 THIN-FILM CAPACITOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-03-31
Information query