Invention Grant
US08605490B2 Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
有权
将相变存储器并入CMOS工艺的非易失性SRAM单元
- Patent Title: Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
- Patent Title (中): 将相变存储器并入CMOS工艺的非易失性SRAM单元
-
Application No.: US12577631Application Date: 2009-10-12
-
Publication No.: US08605490B2Publication Date: 2013-12-10
- Inventor: Richard Fackenthal
- Applicant: Richard Fackenthal
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A SRAM cell having two cross-coupled inverters formed by CMOS technology and first and second chalcogenic elements integrated with the SRAM cell to add nonvolatile properties to the storage cell. The PCM resistors are programmed to the SET state and the RESET state, and upon power-up the SRAM cell takes on the data contained in the PCM cells.
Public/Granted literature
- US20110085372A1 NON-VOLATILE SRAM CELL THAT INCORPORATES PHASE-CHANGE MEMORY INTO A CMOS PROCESS Public/Granted day:2011-04-14
Information query
