A static random access memory (SRAM) cell having a dedicated read port separated from a write port comprises a first and a second bit-line placed in parallel forming a complimentary bit-line pair for the dedicated read port, a first and second metal line adjacently flanking in both side of and in parallel to the first bit-line, the first and second metal line being formed in the same metal layer as the first bit-line and having a first and second predetermined distance to the first bit-line, respectively, and a third and fourth metal line adjacently flanking in both side of and in parallel to the second bit-line, the third and fourth metal line being formed in the same metal layer as the second bit-line and having a third and fourth predetermined distance to the second bit-line, respectively, wherein the first predetermined distance is equal to the third distance and the second predetermined distance is equal to the fourth distance for keeping the first and second bit-lines having balanced capacitance loading.