Invention Grant
- Patent Title: Multilevel nonvolatile semiconductor memory system
- Patent Title (中): 多级非易失性半导体存储器系统
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Application No.: US13050431Application Date: 2011-03-17
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Publication No.: US08605500B2Publication Date: 2013-12-10
- Inventor: Naoki Kobayashi , Mitsuaki Honma , Noboru Shibata
- Applicant: Naoki Kobayashi , Mitsuaki Honma , Noboru Shibata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-191368 20100827
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
According to one embodiment, a system includes a memory, a controller which controls an operation of the memory in a data program, and data bus which connects the memory to the controller. The memory comprises a memory cell array with memory cells which have a bit assignment to 2x (x is an integer number of 3 or more) threshold distributions, each memory cell storing x bits, and a control circuit which controls the data program of x bits to the memory cells. The controller comprises a first step generating y bit (y is an integer number and y
Public/Granted literature
- US20120054416A1 MULTILEVEL NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM Public/Granted day:2012-03-01
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