Invention Grant
- Patent Title: Flash memory device and method of verifying the same including a compensated erase verify voltage
- Patent Title (中): 闪存装置及其验证方法,包括补偿擦除验证电压
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Application No.: US13009499Application Date: 2011-01-19
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Publication No.: US08605510B2Publication Date: 2013-12-10
- Inventor: Seungwon Lee , Byeonghoon Lee
- Applicant: Seungwon Lee , Byeonghoon Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2010-0010065 20100203
- Main IPC: G11C16/34
- IPC: G11C16/34

Abstract:
Provided are a flash memory device and a method of verifying the same. The flash memory device includes: a memory cell for storing data; a sense amplifier for reading information of the memory cell; a load current input device for providing a load current to the sense amplifier; and a control circuit for controlling the load current input device to provide a load current during a memory cell reading operation, verifying the memory cell by using a program verify voltage if the memory cell is a programmed memory cell, and verifying the memory cell by using a compensated erase verify voltage if the memory cell is an erased memory cell.
Public/Granted literature
- US20110188318A1 Flash Memory Device and a Method of Verifying the Same Public/Granted day:2011-08-04
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