Invention Grant
US08606988B2 Flash memory control circuit for interleavingly transmitting data into flash memories, flash memory storage system thereof, and data transfer method thereof
有权
闪速存储器控制电路,用于将数据交错地发送到闪速存储器,其闪速存储器存储系统及其数据传输方法
- Patent Title: Flash memory control circuit for interleavingly transmitting data into flash memories, flash memory storage system thereof, and data transfer method thereof
- Patent Title (中): 闪速存储器控制电路,用于将数据交错地发送到闪速存储器,其闪速存储器存储系统及其数据传输方法
-
Application No.: US12542137Application Date: 2009-08-17
-
Publication No.: US08606988B2Publication Date: 2013-12-10
- Inventor: Chih-Kang Yeh
- Applicant: Chih-Kang Yeh
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: J.C. Patents
- Priority: TW98120090A 20090616
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/06 ; G11C11/56

Abstract:
A flash memory control circuit including a microprocessor unit, a first interface unit, a second interface unit, a buffer memory, a memory management unit, and a data read/write unit is provided. The memory management unit manages a plurality of flash memory units, wherein each of the flash memory units has a plurality of flash memories, each of the flash memories has a plurality of memory cell arrays, and each of the memory cell arrays at least has an upper page and a lower page. The memory management unit groups the memory cell arrays of the corresponding flash memories into a plurality of data transfer unit sets (DTUSs). The data read/write unit interleavingly transfers data to the flash memory units in units of the DTUSs. Thereby, the flash memory control circuit can transfer the data stably and the usage of the buffer memory can be reduced.
Public/Granted literature
- US20100318724A1 FLASH MEMORY CONTROL CIRCUIT, FLASH MEMORY STORAGE SYSTEM, AND DATA TRANSFER METHOD Public/Granted day:2010-12-16
Information query