Invention Grant
- Patent Title: Selective error detection and error correction for a memory interface
- Patent Title (中): 存储器接口的选择性错误检测和纠错
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Application No.: US13097721Application Date: 2011-04-29
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Publication No.: US08607121B2Publication Date: 2013-12-10
- Inventor: William C. Moyer
- Applicant: William C. Moyer
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Error correction code (ECC) checkbits are generated for each write access to a memory address based on both the data to be written (the write data) and the memory address. The ECC checkbits are stored with the write data at the memory device associated with the memory address. In addition, the memory device can selectively perform error detection and correction for write accesses using the ECC checkbits. For example, the memory device can include an ECC control register that stores control information to selectively enable and disable error detection and correction for write accesses. In an embodiment, error detection and correction can be selectively enabled and disabled for different sizes of write data.
Public/Granted literature
- US20120278681A1 SELECTIVE ERROR DETECTION AND ERROR CORRECTION FOR A MEMORY INTERFACE Public/Granted day:2012-11-01
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