Invention Grant
- Patent Title: System and method for setting a flash memory cell read threshold
- Patent Title (中): 用于设置闪存单元读取阈值的系统和方法
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Application No.: US12973494Application Date: 2010-12-20
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Publication No.: US08607124B2Publication Date: 2013-12-10
- Inventor: Hanan Weingarten
- Applicant: Hanan Weingarten
- Applicant Address: IL Haifa
- Assignee: Densbits Technologies Ltd.
- Current Assignee: Densbits Technologies Ltd.
- Current Assignee Address: IL Haifa
- Agency: Dentons US LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A system, method and computer readable medium for performing a first read attempt of multiple codeword portions while using a first read threshold candidate to provide multiple first read results, wherein the multiple codeword portions are stored in multiple flash memory cells; calculating a first read threshold candidate error correction decoding based score; wherein the calculating comprises error correction decoding of the multiple first read results; performing a second read attempt of the multiple codeword portions while using a second read threshold candidate to provide multiple second read results; calculating a second read threshold candidate error correction decoding based score; wherein the calculating comprises error correction decoding of the multiple second read results; and selecting a first read threshold out of the first and second read threshold candidates based on a relationship between the first and second read threshold candidate error correction decoding based scores.
Public/Granted literature
- US20110161775A1 SYSTEM AND METHOD FOR SETTING A FLASH MEMORY CELL READ THRESHOLD Public/Granted day:2011-06-30
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