Invention Grant
- Patent Title: Error code pattern generation circuit and semiconductor memory device including the same
- Patent Title (中): 误差码图案生成电路和包括其的半导体存储器件
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Application No.: US12980450Application Date: 2010-12-29
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Publication No.: US08612841B2Publication Date: 2013-12-17
- Inventor: Jung-Hoon Park
- Applicant: Jung-Hoon Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0123434 20101206
- Main IPC: G06F11/00
- IPC: G06F11/00
Abstract:
An error code pattern generation circuit includes a first storage unit configured to store at least one bit of an error code, and output error data for a first time period; and a second storage unit configured to store at least one remaining bit of the error code and output the error data for a second time period which is different from the first time period.
Public/Granted literature
- US20120144278A1 ERROR CODE PATTERN GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2012-06-07
Information query
