Invention Grant
- Patent Title: Semiconductor light-emitting apparatus and method of fabricating the same
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Application No.: US13687106Application Date: 2012-11-28
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Publication No.: US08614109B2Publication Date: 2013-12-24
- Inventor: Ryo Suzuki , Tadao Hayashi
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-shi, Tokushima
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi, Tokushima
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2008-291259 20081113
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.
Public/Granted literature
- US20130146646A1 SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-06-13
Information query
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