Invention Grant
- Patent Title: Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices
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Application No.: US12611421Application Date: 2009-11-03
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Publication No.: US08614435B2Publication Date: 2013-12-24
- Inventor: Phaedon Avouris , Damon B. Farmer , Fengnian Xia
- Applicant: Phaedon Avouris , Damon B. Farmer , Fengnian Xia
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336
Abstract:
A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.
Public/Granted literature
- US20110101308A1 Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices Public/Granted day:2011-05-05
Information query
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