Invention Grant
- Patent Title: Method of producing a layer of cavities
- Patent Title (中): 制造空腔层的方法
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Application No.: US13143038Application Date: 2010-02-01
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Publication No.: US08614501B2Publication Date: 2013-12-24
- Inventor: Didier Landru
- Applicant: Didier Landru
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR0950805 20090210
- International Application: PCT/EP2010/051197 WO 20100201
- International Announcement: WO2010/091972 WO 20100819
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/31
Abstract:
A method of producing a layer of cavities in a structure comprises at least one substrate formed from a material that can be oxidized or nitrided, the method comprising the following steps: implanting ions into the substrate in order to form an implanted ion concentration zone at a predetermined mean depth; heat treating the implanted substrate to form a layer of cavities at the implanted ion concentration zone; and forming an insulating layer in the substrate by thermochemical treatment from one surface of the substrate, the insulating layer that is formed extending at least partially into the layer of cavities.
Public/Granted literature
- US20110278597A1 METHOD OF PRODUCING A LAYER OF CAVITIES Public/Granted day:2011-11-17
Information query
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