Invention Grant
US08614567B2 Voltage regulator structures and methods with bootstrapped bias capacitor
有权
具有自举偏置电容器的电压调节器结构和方法
- Patent Title: Voltage regulator structures and methods with bootstrapped bias capacitor
- Patent Title (中): 具有自举偏置电容器的电压调节器结构和方法
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Application No.: US12985178Application Date: 2011-01-05
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Publication No.: US08614567B2Publication Date: 2013-12-24
- Inventor: Guoming Wu
- Applicant: Guoming Wu
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G05F1/565
- IPC: G05F1/565

Abstract:
Voltage regulator structures and methods embodiments are provided which employ a high-side N-type switching transistor to thereby enhance system efficiency and also reduce the die area required by these regulator structures. This structure and its advantages, however, require a gate drive signal higher than the input voltage of the voltage regulator. The embodiments resolve this need with a bias capacitor in a bootstrapped arrangement and a control loop arranged to maintain a bias voltage across the capacitor sufficient to always insure rapid switching of the high-side switching transistor during a pulse-width modulation (PWM) operational mode. The embodiments further include a second control loop arranged to insure sufficient voltage across the capacitor during a pulse-frequency modulation (PFM) operational mode.
Public/Granted literature
- US20120169306A1 VOLTAGE REGULATOR STRUCTURES AND METHODS WITH BOOTSTRAPPED BIAS CAPACITOR Public/Granted day:2012-07-05
Information query
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