Invention Grant
US08614913B2 Method and apparatus for controlling page buffer of non-volatile memory device
有权
用于控制非易失性存储器件的页缓冲器的方法和装置
- Patent Title: Method and apparatus for controlling page buffer of non-volatile memory device
- Patent Title (中): 用于控制非易失性存储器件的页缓冲器的方法和装置
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Application No.: US13028313Application Date: 2011-02-16
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Publication No.: US08614913B2Publication Date: 2013-12-24
- Inventor: Han Bin Yoon , Yeong-Jae Woo , Jung Been Im
- Applicant: Han Bin Yoon , Yeong-Jae Woo , Jung Been Im
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0014184 20100217
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method of managing a page buffer of a non-volatile memory device comprises programming least significant bit (LSB) page data from an LSB page buffer into a page of memory cells, and retaining the LSB page data in the LSB page buffer until most significant bit (MSB) page data corresponding to the LSB page data is programmed in the page.
Public/Granted literature
- US20110199822A1 METHOD AND APPARATUS FOR CONTROLLING PAGE BUFFER OF NON-VOLATILE MEMORY DEVICE Public/Granted day:2011-08-18
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