Invention Grant
- Patent Title: Group III nitride semiconductor laser diode
- Patent Title (中): III族氮化物半导体激光二极管
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Application No.: US12836065Application Date: 2010-07-14
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Publication No.: US08619828B2Publication Date: 2013-12-31
- Inventor: Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
- Applicant: Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electronic Industries, Ltd.
- Current Assignee: Sumitomo Electronic Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JPP2009-165889 20090714
- Main IPC: H01S5/343
- IPC: H01S5/343

Abstract:
A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising Inx1Ga1-x1N (0≦x1
Public/Granted literature
- US20110013656A1 GROUP III NITRIDE SEMICONDUCTOR LASER DIODE Public/Granted day:2011-01-20
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