Invention Grant
US08621730B2 Capacitor producing method for producing thin-film capacitors eliminating defects
失效
制造消除缺陷的薄膜电容器的电容器制造方法
- Patent Title: Capacitor producing method for producing thin-film capacitors eliminating defects
- Patent Title (中): 制造消除缺陷的薄膜电容器的电容器制造方法
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Application No.: US13203018Application Date: 2010-02-12
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Publication No.: US08621730B2Publication Date: 2014-01-07
- Inventor: Akinobu Shibuya , Koichi Takemura , Takashi Manako
- Applicant: Akinobu Shibuya , Koichi Takemura , Takashi Manako
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-042210 20090225
- International Application: PCT/JP2010/000853 WO 20100212
- International Announcement: WO2010/098026 WO 20100902
- Main IPC: H01G7/00
- IPC: H01G7/00

Abstract:
In a capacitor producing method, a bottom electrode, a thin-film dielectric, and a top electrode are deposited on a substrate so as to form a capacitor, wherein defects including particles and electrical short-circuits between the bottom electrode and the top electrode are detected before the capacitor is divided into capacitor cells. Next, defects such as particles and electrical short-circuits between the bottom electrode and the top electrode are removed before the capacitor is divided into capacitor cells.
Public/Granted literature
- US20110302753A1 CAPACITOR PRODUCING METHOD, CAPACITOR PRODUCING DEVICE, AND CAPACITOR PRODUCING PROGRAM Public/Granted day:2011-12-15
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