Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
- Patent Title (中): 基板处理方法和基板处理装置
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Application No.: US13353883Application Date: 2012-01-19
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Publication No.: US08623146B2Publication Date: 2014-01-07
- Inventor: Masahiko Kato , Naozumi Fujiwara , Katsuhiko Miya
- Applicant: Masahiko Kato , Naozumi Fujiwara , Katsuhiko Miya
- Applicant Address: JP
- Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2011-009906 20110120
- Main IPC: B08B7/04
- IPC: B08B7/04 ; B08B5/00 ; B08B3/10

Abstract:
A cooling gas discharge nozzle 7 is arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR0, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.
Public/Granted literature
- US20120186275A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2012-07-26
Information query
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