Invention Grant
- Patent Title: Continuous vacuum deposition method
- Patent Title (中): 连续真空沉积法
-
Application No.: US13097207Application Date: 2011-04-29
-
Publication No.: US08623182B2Publication Date: 2014-01-07
- Inventor: Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Lone-Wen Tai , Cheng-Shi Chen
- Applicant: Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Lone-Wen Tai , Cheng-Shi Chen
- Applicant Address: TW New Taipei
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201010234736 20100723
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
A continuous vacuum sputtering method includes the steps of providing a substrate; providing a continuous vacuum sputtering machine comprising a depositing chamber. The depositing chamber comprising at least one vacuum chamber, each vacuum chamber having a cathodic arc emitting source located therein; the substrate being loaded in the continuous vacuum sputtering machine; depositing a coating on the substrate by cathodic arc deposition using the cathodic arc emitting source.
Public/Granted literature
- US20120018296A1 CONTINUOUS VACUUM SPUTTERING METHOD Public/Granted day:2012-01-26
Information query
IPC分类: