Invention Grant
- Patent Title: Method for making a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11208609Application Date: 2005-08-23
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Publication No.: US08623255B2Publication Date: 2014-01-07
- Inventor: Hideo Asakawa
- Applicant: Hideo Asakawa
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Smith Patent Office
- Priority: JP2002-259482 20020905; JP2003-133874 20030513
- Main IPC: H01L21/56
- IPC: H01L21/56

Abstract:
A method of making a semiconductor device comprising a semiconductor element and a support member having a recess for housing the semiconductor element is disclosed. The method includes placing at least two lead electrode portions in the molding die; supplying a molding member to the molding die so that the molding member contacts the portion of at least two lead electrode portions; heating the molding member in the molding die so as to cure the molding member into a package with the portion of at least two lead electrode portions; and removing the package from the molding die by a pushing member such that at least one of a protrusion and a recess are formed in a surface of the package. Using this process, a semiconductor device can be obtained with a high process yield.
Public/Granted literature
- US20050277216A1 Method for making a semiconductor device Public/Granted day:2005-12-15
Information query
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