Invention Grant
- Patent Title: Methods of fabricating metal hard masks
- Patent Title (中): 制造金属硬掩模的方法
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Application No.: US13343857Application Date: 2012-01-05
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Publication No.: US08623468B2Publication Date: 2014-01-07
- Inventor: Su-Horng Lin , Lin-Jung Wu , Chi-Ming Yang , Chin-Hsiang Lin
- Applicant: Su-Horng Lin , Lin-Jung Wu , Chi-Ming Yang , Chin-Hsiang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
Methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods are described. The method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.
Public/Granted literature
- US20130174982A1 METAL HARD MASK FABRICATION Public/Granted day:2013-07-11
Information query
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