Invention Grant
- Patent Title: Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel
- Patent Title (中): 薄膜晶体管基板，其制造方法和液晶显示面板
-
Application No.: US13808375Application Date: 2011-07-01
-
Publication No.: US08623681B2Publication Date: 2014-01-07
- Inventor: Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
- Applicant: Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-157149 20100709
- International Application: PCT/JP2011/003779 WO 20110701
- International Announcement: WO2012/004958 WO 20120112
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An auxiliary capacitor (6a) includes a capacitor line (11ba), a gate insulating film (12) provided so as to cover the capacitor line (11ba), a semiconductor layer (13b) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b), and a drain electrode (14ba) provided on the semiconductor layer (13b) and connected to a pixel electrode (16a). The semiconductor layer (13b) made of an oxide semiconductor and the pixel electrode (16a) made of an oxide conductor contact each other.
Public/Granted literature
- US20130214272A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL Public/Granted day:2013-08-22
Information query
IPC分类:
