Invention Grant
- Patent Title: Silicon device and silicon device manufacturing method
- Patent Title (中): 硅器件和硅器件制造方法
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Application No.: US13348905Application Date: 2012-01-12
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Publication No.: US08623703B2Publication Date: 2014-01-07
- Inventor: Shin Takahashi , Junichi Takeuchi
- Applicant: Shin Takahashi , Junichi Takeuchi
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2011-004597 20110113
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/04
Abstract:
A silicon device has a flat panel shape which is a polygon in a plan view, and at least one corner of the polygon includes two sides adjacent to each other out of plural sides of the polygon and a corner curve portion connected to the two sides so as to connect the two sides.
Public/Granted literature
- US20120181666A1 SILICON DEVICE AND SILICON DEVICE MANUFACTURING METHOD Public/Granted day:2012-07-19
Information query
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