Invention Grant
US08623737B2 Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
有权
用于薄膜电容器制造的溶胶 - 凝胶和掩模图案，由此制造的薄膜电容器以及包含该薄膜电容器的系统
- Patent Title: Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
- Patent Title (中): 用于薄膜电容器制造的溶胶 - 凝胶和掩模图案，由此制造的薄膜电容器以及包含该薄膜电容器的系统
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Application No.: US11396386Application Date: 2006-03-31
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Publication No.: US08623737B2Publication Date: 2014-01-07
- Inventor: Huankiat Seh , Yongki Min , Cengiz A. Palanduz
- Applicant: Huankiat Seh , Yongki Min , Cengiz A. Palanduz
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes Davda & Victor LLP
- Agent Alan S. Raynes
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.
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