Invention Grant
- Patent Title: Capacitor structure and fabrication method thereof
- Patent Title (中): 电容器结构及其制造方法
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Application No.: US13085493Application Date: 2011-04-13
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Publication No.: US08623738B2Publication Date: 2014-01-07
- Inventor: Tah-Te Shih , Tsung-Cheng Yang
- Applicant: Tah-Te Shih , Tsung-Cheng Yang
- Applicant Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Assignee: Inotera Memories, Inc.
- Current Assignee: Inotera Memories, Inc.
- Current Assignee Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW100103623A 20110131
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A DRAM capacitor structure is disposed on the interior surface of a vertical hollow cylinder of a support structure overlying a semiconductor substrate. The support structure further includes a horizontal supporting layer that is integrally connected with the vertical hollow cylinder. A fabrication method for forming the DRAM capacitor structure is also provided.
Public/Granted literature
- US20120193757A1 CAPACITOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2012-08-02
Information query
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